Total Ionizing Dose Effects in NOR and NAND Flash Memories

Two Flash Technologies Compared : NOR vs NAND

Design of on-chip error correction systems for multilevel NOR and NAND flash memories

The design of on-chip error correction systems for multilevel code-storage NOR flash and data-storage NAND flash memories is concerned. The concept of trellis coded modulation (TCM) has been used to design on-chip error correction system for NOR flash. This is motivated by the non-trivial modulation process in multilevel memory storage and the effectiveness of TCM in integrating coding with mod...

Reliability of 3D NAND Flash Memories

Reliability represents one of the major antagonist towards the unstoppable technological evolution of hyperscaled NAND memories, since the correct operations must be assured throughout the entire lifetime. In particular, the ability of keeping unaltered the stored information even after a consistent number of write operations and for long times must be guaranteed. A growth of the memory devices...

Architectural and Integration Options for 3D NAND Flash Memories

Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in consumer and enterprise scenarios. To keep the evolutionary pace of the technology, NAND Flash must scale aggressively in terms of bit cost. Whe...

Page overwriting method for performance improvement of NAND flash memories

This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ∼ 47.5 times faster page update time with one overwrite allowance and 1.3 ∼ 18.7 with four overwrites all...